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page 1 http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 1 2 2 2 2~3 4 5~7 8 8 8 9 10 10 11 list list................................................................................................. package outline............................................................................... features.......................................................................................... maximum ratings ............................................................................. switching time equivalent test circuits................................................ rating and characteristic curves........................................................ pinning information........................................................................... marking........................................................................................... suggested solder pad layout............................................................. packing information.......................................................................... reel packing.................................................................................... suggested thermal profiles for soldering processes............................. high reliability test capabilities.......................................................... mechanical data............................................................................... npn epitaxial planar transistor formosa ms fmbt3904 document id issued date revised date revision page. ds-231106 2008/02/10 2011/07/21 e 11
package outline page 2 http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 200ma silicon npn epitaxial planar transistor collector-emitterbreakdien voltage. (bv = 40v@i =1ma) s lead-free parts for green partner, exceeds environmental standards of mil-std-19500 /228 features ceo c mall load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current. capable of 225mw power dissipation. ? suffix "-h" indicates halogen free part, ex. fm|3904-h. ? ? ? ? high parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current total device dissipation fr-5 board (1) storage temperature operating temperature conditions symbol v cbo v ceo v ebo i c p d t j t stg min. -55 -65 typ. max. 60 40 6.0 200 +150 +150 unit v v v ma mw o c maximum ratings (at t =25 c unless otherwise noted) a o junction to ambient r ja 556 o c/w mechanical data ? ? ? ? ? epoxy:ul94-v0 rated flame retardant case : terminals : solder plated, solderable per mil-std-750, method 2026 mounting position : any molded plastic, sot-23 weight : approximated 0.008 gram p d thermal resistance 225 1.8 t= 25c a o derate above 25 c o npn epitaxial planar transistor formosa ms mw/ c o total device dissipation alumina substrate(2) p d mw junction to ambient r ja 417 o c/w p d thermal resistance 300 2.4 t= 25c a o derate above 25 c o mw/ c o 1.fr-5 = 1.0 x 0.75 x0.062 in. 2.alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. fmbt3904 document id issued date revised date revision page. sot-23 dimensions in inches and (millimeters) 0.035 (0.89) 0.051 (1.30) 0.063 (1.60) 0.047 (1.20) 0.108 (2.75) 0.083 (2.10) 0.027 (0.67) 0.013 (0.32) (a) (b) (c) 0.120 (3.04) 0.110 (2.80) .084(2.10) .068(1.70) 0.045 (1.15) 0.034 (0.85) 0.020 (0.50) 0.012 (0.30) 0.007 (0.18) 0.003 (0.09) ds-231106 2008/02/10 2011/07/21 e 11
parameter collector-base breakdown voltage collector-emitter voltage(3) breakdown emitter-base voltage breakdown base cutoff current conditions symbol v (br)cbo v ceo (br) v ebo (br) i bl i cex min. typ. max. 60 40 6.0 50 unit v v v na 50 npn epitaxial planar transistor formosa ms characteristics (at t =25 c unless otherwise noted) a o off characteristics i = 10ua, i = 0 ce i = 1ma, i = 0 cb i = 10ua, i = 0 ec collector cutoff current v = 30v, v = 3.0v ce eb v = 30v, v = 3.0v ce eb 3.pulse test : pukse width < 300us, duty cycle < 2.0%. parameter dc current gain conditions symbol h fe min. typ. max. 40 70 100 60 unit - v 30 on characteristics (3) i = 0.1ma, v = 1.0v cce i = 1.0ma, v = 1.0v cce i = 10ma, v = 1.0v cce i = 50ma, v = 1.0v cce i = 100ma, v = 1.0v cce collector-emitter saturation voltage(3) base-emitter saturation voltage(3) i = 10ma, i = 1.0ma cb i = 50ma, i = 5.0ma cb i = 10ma, i = 1.0ma cb i = 50ma, i = 5.0ma cb v 0.2 0.3 0.85 0.95 0.65 v ce(sat) v be(sat) parameter input capacitance conditions symbol c ibo min. typ. max. 300 4.0 8.0 1.0 unit - 0.5 small-signal characteristics i = 10ma, v = 20v, f = 100mhz cce output admittance v = 5.0v, i = 100ua, rs = 1.0k ohms, f = 1.0khz ce c db 400 40 5.0 h fe nf current-gain-bandwidth product output capacitance input impedance voltage feeback radio small-signal current gain noise figure v = 5.0v, i = 0, f = 1.0mhz cb e v = 0.5v, i = 0, f = 1.0mhz eb c v = 10v, i = 1.0ma, f = 1.0khz ce c v = 10v, i = 1.0ma, f = 1.0khz ce c v = 10v, i = 1.0ma, f = 1.0khz ce c v = 10v, i = 1.0ma, f = 1.0khz ce c f t c obo h ie h re h oe 10 8.0 100 1.0 x 10 -4 umhos pf kohms mhz pf page 3 http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 parameter storage time conditions symbol ts min. typ. max. 35 200 unit switching characteristics delay time rise time fall time v = 3.0v, v = -0.5v, i = 10ma, i = 1.0ma cc be c b1 td tr tf 50 v = 3.0v, i =10ma, i = i = 1.0ma cc c b1 b2 ns 35 fmbt3904 document id issued date revised date revision page. 300 ds-231106 2008/02/10 2011/07/21 e 11
page 4 http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 npn epitaxial planar transistor formosa ms fmbt3904 switching time equivalent test circuits document id issued date revised date revision page. -0.5v ds-231106 2008/02/10 2011/07/21 e 11
page 5 http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 typical transient characteristics document id issued date revised date revision page. ds-231106 2008/02/10 2011/07/21 e 11
page 6 http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 document id issued date revised date revision page. nf, noise figure (db) nf, noise figure (db) typical audio small signal characteristics noise figure variations - (vce=5.0 v. ta=25 c, bandwidth=1.0hz) h parameters (vce=10 v, f=1.0 khz, ta=25 c) ds-231106 2008/02/10 2011/07/21 e 11
page 7 http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 typical static characteristics document id issued date revised date revision page. ds-231106 2008/02/10 2011/07/21 e 11
suggested solder pad layout page 8 sot-23 dimensions in inches and (millimeters) 0.035(0.90) 0.031(0.80) 0.079(2.0) 0.037(0.95) 0.037(0.95) http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 pinning information pinb base pinc collector pine emitter pin simplified outline symbol marking type number marking code 1am b c e e c b npn epitaxial planar transistor formosa ms fmbt3904 document id issued date revised date revision page. lf fmbt3904 k1n ds-231106 2008/02/10 2011/07/21 e 11
packing information item tolerance sot-23 carrier width carrier length carrier depth sprocket hole 13" reel outside diameter 7" reel outside diameter 13" reel inner diameter 7" reel inner diameter feed hole diameter sprocket hole position punch hole position punch hole pitch sprocket hole pitch embossment center reel width overall tape thickness tape width p 0 p 1 e b c d f t w p a d d d 1 d 1 d 2 w 1 symbol 0.1 0.1 0.1 min min 0.5 0.1 0.3 1.0 0.1 0.1 0.1 0.1 0.1 0.1 2.0 2.0 unit:mm 1.50 - 178.00 - 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 page 9 note:devices are packed in accor dance with eia standar rs-481-a and specifications listed above. 3.15 2.77 1.22 p 0 p 1 e b d f w p a d d 1 d 2 w 1 c t http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 npn epitaxial planar transistor formosa ms fmbt3904 document id issued date revised date revision page. ds-231106 2008/02/10 2011/07/21 e 11
reel packing page 10 sot-23 3,000 4.0 30,000 183*183*123 178 382*262*387 240,000 11.6 package reel size reel component spacing box inner box reel dia, carton size carton approx. gross weight (kg) (pcs) (m/m) (m/m) (m/m) (pcs) (m/m) (pcs) 7" http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 npn epitaxial planar transistor formosa ms fmbt3904 document id issued date revised date revision page. profile feature soldering condition average ramp-up rate(t to t ) <3 /sec preheat -temperature min(tsmin) 150 -temperature max(tsmax) 200 -time(min to max)(t ) 60~120sec tsmax to t -ramp-uprate <3 /sec time maintained above: -temperature(t ) 217 -time(t ) 60~260sec peak temperature(t ) 255 0/ 5 time within 5 of actual peak temperature(t ) ramp-down rate <6 /sec time 25 to peak temperature <6minutes lp s l l l p p o o o o o oo o o o c c c c c c- + c c c c 3.reflow soldering 10~30sec 1.storage environment: temperature=5 ~40 humidity=55% 25% 2.reflow soldering of surface-mount devices oo cc suggested thermal profiles for soldering processes critical zone tl to tp critical zone tl to tp tl tsmax tsmin ramp-up tp ts preheat t25 c to peak o time 25 tl tp ramp-down temperature ds-231106 2008/02/10 2011/07/21 e 11
high reliability test capabilities 1. 2. 3. 4. 5. 6. 7. 8. steady state operating life high temperature reverse bias temperature cycle autoclave high temperature storage life solderability high temperature high humidity resistance to soldering heat reverse bias p =225mw test duration:1000hrs tj 150 v 80 related volage 1000hrs 55 15min to 150 15min air to air transition time 20sec test cycles 1000cycle p 2atm ta 121 rh 100 test duration 96hrs 150 test duration 1000hrs 245 5sec ta 85 85 rh v 80 related volage 1000hrs 260 10sec d ce ce =,=% , -( ) ( ) < : == =% : : =,%,=% , ta = , , item test conditions npn epitaxial planar transistor formosa ms fmbt3904 page 11 http://www.formosams.com/ tel:886-2-22696661 fax:886-2-22696141 document id issued date revised date revision page. ds-231106 2008/02/10 2011/07/21 e 11

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